4 Inch [100] Single side polished silicon wafer 2000nm oxide layer monocrystalline silicon wafers silicon substrates
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| Price from: | 70.18 $ |
| Prices are approximate and are indebted to the time of inclusion in the product catalog. | |
Description:4 Inch [100] Single side polished silicon wafer 2000nm oxide layer monocrystalline silicon wafers silicon substratesIntroducing our high-quality 4 Inch [100] Single Side Polished Silicon Wafer with a 2000nm oxide layer. This monocrystalline silicon wafer is the perfect choice for various applications in the semiconductor industry. With its exceptional uniformity and precise dimensions, it guarantees superior performance and reliability. Crafted using advanced manufacturing techniques, this silicon wafer boasts a single side polished surface, ensuring a smooth and flawless finish. The 2000nm oxide layer provides excellent insulation properties, making it ideal for applications requiring electrical isolation. Whether you need it for research, development, or production purposes, this wafer offers exceptional stability and consistency, enabling accurate and repeatable results. Built on a monocrystalline silicon substrate, this wafer exhibits excellent mechanical strength and thermal stability. Its high purity ensures minimal impurities, enhancing its electrical properties and making it suitable for a wide range of electronic devices. Additionally, the 4-inch diameter [100] orientation enables easy integration into existing processes and equipment, simplifying the production workflow. In summary, our 4 Inch [100] Single Side Polished Silicon Wafer with a 2000nm oxide layer provides exceptional quality and performance. Its monocrystalline structure, precise dimensions, and smooth polished surface make it an excellent choice for semiconductor applications. With its outstanding electrical insulation properties and compatibility with existing processes, this silicon wafer is a reliable solution for your research, development, or production needs. |
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