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4 inch SiO2 wafer with 50nm -2000nm double / single side oxide layer silicon oxide wafer for scientific research

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Enlarge 4 inch SiO2 wafer with 50nm -2000nm double / single side oxide layer silicon oxide wafer for scientific research
4 inch SiO2 wafer with 50nm -2000nm double / single side oxide layer silicon oxide wafer for scientific research enlarge
4 inch SiO2 wafer with 50nm -2000nm double / single side oxide layer silicon oxide wafer for scientific research enlarge
4 inch SiO2 wafer with 50nm -2000nm double / single side oxide layer silicon oxide wafer for scientific research enlarge
4 inch SiO2 wafer with 50nm -2000nm double / single side oxide layer silicon oxide wafer for scientific research enlarge
4 inch SiO2 wafer with 50nm -2000nm double / single side oxide layer silicon oxide wafer for scientific research enlarge
4 inch SiO2 wafer with 50nm -2000nm double / single side oxide layer silicon oxide wafer for scientific research enlarge
Price from: 53.16 $
Prices are approximate and are indebted to the time of inclusion in the product catalog.

Description:

4 inch SiO2 wafer with 50nm -2000nm double / single side oxide layer silicon oxide wafer for scientific research
Introducing our 4 inch SiO2 wafer with a double/single side oxide layer, designed specifically for scientific research purposes. This high-quality silicon oxide wafer offers researchers a versatile and reliable tool for various experimental applications. With a thickness ranging from 50nm to 2000nm, this wafer provides the flexibility needed to conduct precise and accurate experiments.

The 4 inch SiO2 wafer is meticulously engineered to meet the demanding requirements of scientific research. The double/single side oxide layer enhances the wafer's performance by providing an additional protective barrier and improving its electrical properties. This feature allows researchers to explore a wide range of applications, including microelectronics, nanotechnology, and optoelectronics, with confidence and precision.

Crafted with utmost precision and using state-of-the-art technology, this SiO2 wafer guarantees exceptional quality and reliability. Its 4-inch size offers a generous surface area for conducting experiments, while the oxide layer ensures optimal performance and durability. Whether you are studying material properties, developing new devices, or investigating surface phenomena, our SiO2 wafer is an indispensable tool for your scientific research needs.

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